pa1952 description the pa1952 is a switching device, which can be driven directly by a 1.8 v power source. the device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? 1.8 v drive available ? low on-state resistance r ds(on)1 = 135 m ? max. (v gs = ? 4.5v, i d = ? 1.0 a) r ds(on)2 = 183 m ? max. (v gs = ? 2.5 v, i d = ? 1.0 a) r ds(on)3 = 284 m ? max. (v gs = ? 1.8 v, i d = ? 0.5 a) ordering information part number package pa1952te sc-95 (mini mold thin type) marking: tp absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ? 20 v gate to source voltage (v ds = 0 v) v gss m 8.0 v drain current (dc) i d(dc) m 2.0 a drain current (pulse) note1 i d(pulse) m 8.0 a total power dissipation (2 units) note2 p t1 1.15 w total power dissipation (1 unit) note2 p t2 0.57 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board of 5000 mm 2 x 1.1 mm, t 5 sec. equivalent circuits source 1 body diode gate protection diode gate 1 drain 1 source 2 body diode gate protection diode gate 2 drain 2 package drawing (unit: mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 4 : drain 2 3: gate 2 2: source 2 6: drain 1 1: gate 1 5: source 1 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 20 v, v gs = 0 v ? 10 a gate leakage current i gss v gs = m 8.0 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1.0 ma ? 0.45 ? 0.75 ? 1.5 v forward transfer admittance | y fs |v ds = ? 10 v, i d = ? 1.0 a 1.0 4.1 s drain to source on-state resistance r ds(on)1 v gs = ? 4.5 v, i d = ? 1.0 a 108 135 m ? r ds(on)2 v gs = ? 2.5 v, i d = ? 1.0 a 137 183 m ? r ds(on)3 v gs = ? 1.8 v, i d = ? 0.5 a 170 284 m ? input capacitance c iss v ds = ? 10 v 272 pf output capacitance c oss v gs = 0 v 60 pf reverse transfer capacitance c rss f = 1.0 mhz 30 pf turn-on delay time t d(on) v dd = ? 10 v, i d = ? 1.0 a 29 ns rise time t r v gs = ? 4.0 v 120 ns turn-off delay time t d(off) r g = 10 ? 145 ns fall time t f 148 ns total gate charge q g v dd = ? 16 v 2.3 nc gate to source charge q gs v gs = ? 4.0 v 0.6 nc gate to drain charge q gd i d = ? 2.0 a 0.6 nc body diode forward voltage v f(s-d) i f = 2.0 a, v gs = 0 v 0.9 v test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs( ? ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = ? 2 ma v gs wave form v ds wave form v gs( ? ) v ds( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% pa1952 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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